Samsung’s V-Nand, a new type of Flash cells, makes it possible to
have durable and large SSDs. Two dozen Flash cells are stacked together in a
semi-conductor layer. V-Nand stores data as electrons in an isolator. The
Control Gate fills and empties it. The data is read out via a channel. V-Nand
is constructed in a 30nm process but achieves the storage density of a normal
20nm Flash, which achieves only 3,000 deletion cycles while V-Nand achieves
more than 30,000.
Tuesday, 14 January 2014
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